Demonstrating the capability of GaN HEMTs for satellite communication

Posted in: Infos, TTI- ago 26, 2016 No Comments

GaN HEMTs are ideal for making high-power amplifiers for satellite communication, because they are lightweight, compact, efficient and capable of delivering a high output power and uniform gain over a broad bandwidth. Click here and read the whole article published in Compound Semiconductor Magazine written by Rocco Giofrè and Paolo Colantonio from the University of [...]