Demonstrating the capability of GaN HEMTs for satellite communication

Posted in: Infos, TTI- ago 26, 2016 No Comments

GaN HEMTs are ideal for making high-power amplifiers for satellite communication, because they are lightweight, compact, efficient and capable of delivering a high output power and uniform gain over a broad bandwidth. Click here and read the whole article published in Compound Semiconductor Magazine written by Rocco Giofrè and Paolo Colantonio from the University of Roma Tor Vergata, and Laura González, Francisco de Arriba and Lorena Cabria from TTI.

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