Tag: GaN HEMT

26
Aug

Demonstrating the capability of GaN HEMTs for satellite communication

GaN HEMTs GaN HEMTs are ideal for making high-power amplifiers for satellite communication, because they are lightweight, compact, efficient and capable of delivering a high output power and uniform gain over a broad bandwidth. Click here and read the whole article published in Compound Semiconductor Magazine written by Rocco Giofrè and Paolo Colantonio from the University of Roma Tor Vergata,
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